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2MBI300UE-120
IGBT Module U-Series
Features
* High speed switching * Voltage drive * Low inductance module structure
1200V / 300A 2 in one-package
Equivalent Circuit Schematic
C1 E2
Applications
* Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines
C2E1 G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions
Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2
1 device
AC:1min.
Rating 1200 20 450 300 900 600 300 600 1660 +150 -40 to +125 2500 3.5 4.5
Unit V V A
W C VAC N*m
*1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5 or M6), Terminals 3.5 to 4.5N*m(M6)
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(j) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=300mA VGE=15V, IC=300A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=300A VGE=15V RG=2.0 VGE=0V IF=300A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 1.95 - 2.20 - 1.75 - 2.00 - 34 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.75 - 1.85 - 1.60 - 1.70 - - - 0.45 Unit Max. 3.0 600 8.5 2.30 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.05 - 1.90 - 0.35 - mA nA V V
Input capacitance Turn-on time
nF s
Turn-off time Forward on voltage
V
Reverse recovery time Lead resistance, terminal-chip*3
IF=300A
s m
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.0167 Unit Max. 0.075 0.12 - C/W C/W C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
2MBI300UE-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
800 800
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
VGE=20V 600 Collector current : Ic [A]
15V
12V 600 Collector current : Ic [A]
VGE=20V
15V
12V
400
10V
400
10V
200 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V]
200 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
800
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10.0
Collector - Emitter voltage : VCE [ V ]
600 Collector current : Ic [A]
8.0
T j=25C
6.0
400
T j=125C
4.0 Ic=600A Ic=300A Ic=150A
200
2.0
0 0.0 1.0 2.0 3.0 4.0
0.0 5.0 10.0 15.0 20.0 25.0
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C
100.0 Cies Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=300A, Tj= 25C
10.0 Cres Coes
VGE
1.0
VCE 0 200 400 600 800 1000 1200 1400 1600
0.1 0.0 10.0 20.0 30.0
0
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
2MBI300UE-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2, Tj= 25C
10000 10000
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2, Tj=125C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
1000 toff ton tr 100
tf
10 0 100 200 300 400 500 600 Collector current : Ic [ A ]
10 0 100 200 300 400 500 600 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 60.0
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2
Eoff(125C)
Switching time : ton, tr, toff, tf [ nsec ]
ton toff 1000
50.0
Eon(125C)
40.0 Eoff(25C) 30.0 Eon(25C)
tr 100 tf
20.0 Err(125C) 10.0 0.0 Err(25C)
10 0.1 1.0 10.0 100.0
0
100
200
300
400
500
600
Gate resistance : Rg [ ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=15V, Tj= 125C
250.0 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200.0 Collector current : Ic [ A ] 600 800
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 2 ,Tj <= 125C
150.0
400
100.0 Eoff 50.0 Err 0.0 0.1 1.0 10.0 100.0
200
0 0 200 400 600 800 1000 1200 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ]
2MBI300UE-120
Forward current vs. Forward on voltage (typ.) chip
800 700 Forward current : IF [ A ] 600 500 400 300 200 100 0 0.00 1.00 2.00 3.00 4.00 Forward on voltage : VF [ V ] 10 0 100 200 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] T j=25C T j=125C 1000
IGBT Module
Reverse recovery characteristics (typ.) Vcc=V, VGE=15V, Rg=2
100
trr Irr Irr trr
(125C) (125C) (25C) (25C)
400
500
600
Forward current : IF [ A ]
Transient thermal resistance (max.)
1.000
Thermal resistanse : Rth(j-c) [ C/W ]
FWD 0.100 IGBT
0.010
0.001 0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm

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